<3,mi-l.ondiictoi ij-^i , line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 stp36n06 STP36N06FI n- channel enhancement mode power mos transistor type stp36n06 STP36N06FI vdss 60 v 60 v rds(on) < 0.04 n < 0.04 n id 36 a 21 a typical ros(on) = 0.03 q avalanche rugged technology 100% avalanche tested repetitive avalanche data at 100c low gate charge high current capability 175c operating temperature application oriented characterization applications high current, high speed switching solenoid and relay drivers regulators dc-dc & dc-ac converters motor control, audio amplifiers automotive environment (injection, abs, air-bag, lampdrivers, etc.) to-220 isowatt220 internal schematic diagram s(3) absolute maximum ratings symbol vds vdgr vgs id id !dm(?) plot viso tstg t, parameter drain-source voltage (vos = 0) drain- gate voltage (res = 20 kq) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max. operating junction temperature value stp36n06 STP36N06FI 60 60 20 36 25 144 120 0.8 ? 21 14 144 40 0.27 2000 -65 to 175 175 unit v v v a a a w w/c v c c (?) pulse width limited by safe operating area nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
stp36n06/fi thermal data rthj-case rthj- amb rthc-sink t| thermal thermal thermal m aximum resistance resistance resistance junction-case junction-ambient case-sink lead temperature for soldering max m ax typ purpose to -2 20 1.25 isowatt220 3.75 625 0 5 300 c/w c/w c/w c avalanche characteristics symbol parameter iar avalanche current, repetitive or not-repetitive (pulse width limited by tj max, 5 < 1%) eas single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 25 v) ear repetitive avalanche energy (pulse width limited by tj max, 5 < 1%) iar avalanche current, repetitive or not-repetitive (tc = 100 c, pulse width limited by tj max, 6 < 1%) max value 36 240 60 25 unit a mj m j a electrical characteristics (tcase = 25 c unless otherwise specified) off symbol parameter v(br)oss drain-source breakdown voltage loss zero gate voltage dram current (vos= 0) loss gate-body leakage current (vos = 0) test conditions id = 250 pa vgs= 0 vds = max rating vds= max rating x 0.8 tc=125c vgs = 20 v win. typ. 60 max. 1 10 100 unit v ma ma na on (*) symbol parameter vos(th) gate threshold voltage rds(on) static drain-source on resistance ld(on) on state drain current test conditions vds= vgs id= 250 ua vgs - 10v id = 18 a vds> ld(on)x rds(on)max vgs = 10 v min. typ. 2 2.9 0 03 36 max. 4 0 04 unit v q a dynamic symbol parameter 9fs (*) forward transconductance ciss input capacitance coss output capacitance crss reverse transfer capacitance test conditions vds > ld(on) x rds(on)max id =18 a vds= 25 v f = 1 mhz vos= 0 min. typ. 12 16 1130 480 140 max. 1500 650 200 unit s pf pf pf
stp36n06/fi electrical characteristics (continued) switch ing on symbol parameter td(on) turn-on time tr rise time (di/dt)on turn-on current slope qg total gate charge qgs gate-source charge qgd gate-drain charge test conditions vdd= 25 v id= 18 a rg = 50 o vgs = 10 v (see test circuit, figure 3) vdd= 40 v id = 36 a rg = 50 q vgs = 10 v (see test circuit, figure 5) vdd = 40 v id= 36 a vgs= 10 v min. typ. 45 280 200 42 11 21 max. 65 400 60 unit ns ns a/us nc nc nc switch ing off symbol parameter tr(voff) off-voltage rise time tf fall time tc cross-over time test conditions vdd=40v id=36a rg= 50 q vgs = 10 v (see test circuit, figure 5) min. typ. 1 10 105 220 max. 160 150 310 unit ns ns ns source drain diode symbol parameter isd source-dram current isdm(') source-drain current (pulsed) vsd(*) forward on voltage trr reverse recovery time qrr reverse recovery charge irrm reverse recovery current (*) pulsed: pulse duration = 300 us, duty cycle ?) pulse width limited by safe operating area test conditions isd = 36 a vgs= 0 isd = 36 a di/dt = 100 a/ps vdd = 30 v tj = 150 c (see test circuit, figure 5) 5% min. typ. 90 0.2 4.5 max. 36 144 15 unit a a v ns mc a safe operating areas forto-220 safe operating areas for isowatt22q 4 10'. 4 to1. to9, 4 2 id" 1 = y a'1 bs 5 | - ? 4 s^ ilj u 1? i 1 1 c t >pe: '"o*1 \ \ ratio ^ > a?j, * n fo'2 ' 100ju5 1 ms fflini 10 ns 3 m? ? 8.2 4 10j vd = ~ s v
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